RN2501 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2501~RN2506
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2501,RN2502,RN2503
RN2504,RN2505,RN2506
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SMV (super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1501~RN1506
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2501
4.7
RN2502
10
RN2503
22
RN2504
47
RN2505
2.2
RN2506
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2501~2506
RN2501~2504
RN2505, 2506
RN2501~2506
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
Tj
Tstg
Rating
Unit
−50
V
−50
V
−10
V
−5
−100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-07