RN2421 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = −800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN1421~RN1427
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN2421
1
1
RN2422
2.2
2.2
RN2423
4.7
4.7
RN2424
10
10
RN2425
0.47
10
RN2426
1
10
RN2427
2.2
10
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2421~2427
RN2421~2424
RN2425, 2426
RN2427
RN2421~2427
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
−50
−50
−10
−5
−6
−800
200
150
−55~150
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Unit
V
V
V
mA
mW
°C
°C
1
2001-11-29