RN2407 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2407~RN2409
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2407,RN2408,RN2409
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1407~1409
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2407~RN2409
RN2407
RN2408
RN2409
RN2407~RN2409
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Rating
Unit
−50
V
−50
V
−6
−7
V
−15
−100
mA
200
mW
150
°C
−5~150
°C
1
2001-06-07