RN2401 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2401,RN2402,RN2403,RN2404,RN2405,RN2406
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2401,RN2402,RN2403
RN2404,RN2405,RN2406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1401~1406
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ)
RN2401
4.7
RN2402
10
RN2403
22
RN2404
47
RN2405
2.2
RN2406
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2401~2406
RN2401~2404
RN2405, 2406
RN2401~2406
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-2F1A
Unit
V
V
V
V
mA
mW
°C
°C
1
2001-06-07