RN2307 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2307~RN2309
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2307,RN2308,RN2309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1307~RN1309
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ)
RN2307
10
RN2308
22
RN2309
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2307
RN2308
RN2309
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Rating
Unit
−50
V
−50
V
−6
−7
V
−15
−100
mA
100
mW
150
°C
−55~150
°C
1
2001-06-07