RN2301 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2301,RN2302,RN2303
RN2304,RN2305,RN2306
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1301~1306
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ)
RN2301
4.7
RN2302
10
RN2303
22
RN2304
47
RN2305
2.2
RN2306
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2301~2306
RN2301~2304
RN2305, 2306
RN2301~2306
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
Unit
V
V
V
mA
mW
°C
°C
―
SC-70
2-2E1A
1
2001-06-07