RN2221 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2221~RN2227
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223
RN2224,RN2225,RN2226,RN2227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = −800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN1221~RN1227
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ)
RN2221
1
RN2222
2.2
RN2223
4.7
RN2224
10
RN2225
0.47
RN2226
1
RN2227
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2221~2227
RN2221~2224
RN2225, 2226
RN2227
RN2221~2227
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−6
−800
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
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2-4E1A
1
2001-06-07