RN2201 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2201~RN2206
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1201~RN1206
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2201
4.7
RN2202
10
RN2203
22
RN2204
47
RN2205
2.2
RN2206
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2201~2206
RN2201~2204
RN2205, 2206
RN2201~2206
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
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2-4E1A
1
2001-06-07