RN2131MFV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2131MFV,RN2132MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2131MFV,RN2132MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Unit : mm
1.2±0.05
0.8±0.05
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1131MFV, RN1132MFV
1
2
3
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight : 1.5 mg (typ.)
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−5
V
I_C
−100
mA
P_C (Note1)
150
mW
T_j
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Land Pattern Example
0.5
0.45
Unit : mm
1.15
0.4
0.45
0.4 0.4
1
2009-04-17