RN2130MFV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2130MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2130MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1130MFV
Equivalent Circuit
Unit : mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Unit
Weight : 1.5 mg (typ.)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−10
V
I_C
−100
mA
P_C (Note1)
150
mW
T_j
150
°C
T_stg
−55 to 150
°C
Note1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Example Unit: mm
0.5
0.45
1.15
0.4
0.45
0.4 0.4
1
2010-05-19