RN2114 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2114~RN2118
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114,RN2115,RN2116
RN2117,RN2118
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1114~RN1118
Equivalent Circuit and Bias Resister Values
Type No.
RN2114
RN2115
RN2116
RN2117
RN2118
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114~2118
RN2114
RN2115
RN2116
RN2117
RN2118
RN2114~2118
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−5
−6
−7
−15
−25
−100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2−2H1A
1
2001-06-07