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RN2112MFV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |||
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RN2112MFV,RN2113MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2112MFV,RN2113MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
z Ultra-small package, suited to very high density mounting
z Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
z A wide range of resistor values is available for use in various circuits.
z Complementary to the RN1112MFV and RN1113MFV
Equivalent Circuit
1.2±0.05
0.8±0.05
1
2
3
VESM
1. BASE
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
â
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC(Note 1)
Tj
Tstg
Rating
â50
â50
â5
â100
150
150
â55 to 150
Unit
V
V
V
mA
mW
°C
°C
JEITA
â
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Mounted on an FR4 board (25.4 mm à 25.4 mm à 1.6 mmt)
Land Pattern Example
Unit:mm
0.5
0.45
1.15
0.4
0.45
0.4 0.4
1
2010-05-21
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