RN2112 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2112,RN2113
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2112,RN2113
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1112, RN1113
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
Unit
−50
V
−50
V
−5
V
−100
mA
100
mW
150
°C
−55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2112
RN2113
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE = −5V, I_C = −1mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0, f = 1MHz
―
―
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
120
―
400
―
―
−0.1 −0.3
V
―
200
― MHz
―
3
6
pF
15.4 22 28.6
kΩ
32.9 47 61.1
1
2001-06-07