RN2110MFV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2110MFV,RN2111MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2110MFV,RN2111MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit : mm
z Ultra-small package, suited to very high density mounting
z Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
z A wide range of resistor values is available for use in various circuits.
z Complementary to the RN1110MFV to RN1111MFV
Equivalent Circuit
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C(Note 1)
T_j
T_stg
Rating
−50
−50
−5
−100
150
150
−55 to 150
Unit
V
V
V
mA
mW
°C
°C
VESM
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Land Pattern Example
0.5
Unit:mm
0.45
1.15
0.4
0.45
0.4 0.4
1
2010-05-14