RN2110ACT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2110ACT,RN2111ACT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2110ACT,RN2111ACT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Extra small package (CST3) is applicable for extra high density
fabrication.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1110ACT, RN1111ACT
Equivalent Circuit
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
CST3
1.BASE
2.EMITTER
3.COLLECOTR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−80
mA
Collector power dissipation
P_C (Note)
100
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17