RN2110 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2110,RN2111
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2110,RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1110, RN1111
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
−50
−50
−5
−100
V
JEDEC
―
V
EIAJ
―
V
TOSHIBA
2−2H1A
mA
Weight: 2.4mg
100
mW
150
°C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2110
RN2111
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE = −5V, I_C = −1mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0, f = 1MH_z
―
―
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
120
―
400
―
― −0.1 −0.3
V
―
200
―
MH_z
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2001-06-07