RN2108 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107~RN2109
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107,RN2108,RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1107~RN1109
Equivalent Circuit and Bias Resister Values
Type No.
RN2107
RN2108
RN2109
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN2107~RN2109
RN2107
RN2108
RN2109
RN2107~RN2109
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
−50
−50
−6
−7
−15
−100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2-2H1A
1
2001-06-07