RN2107MFV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2107MFV∼RN2109MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107MFV,RN2108MFV,RN2109MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1107MFV~RN1109MFV
Lead (Pb) - free
1.2±0.05
0.8±0.05
1
2
3
Equivalent Circuit and Bias Resistor Values
Type No.
RN2107MFV
RN2108MFV
RN2109MFV
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
RN2107MFV
V_CBO
−50
Collector-emitter voltage
~RN2109MFV
V_CEO
−50
RN2107MFV
−6
Emitter-base voltage
RN2108MFV
V_EBO
−7
RN2109MFV
−15
Collector current
I_C
−100
Collector power dissipation
RN2107MFV
P_C(Note)
150
Junction temperature
~RN2109MFV
T_j
150
Storage temperature range
T_stg
−55~150
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
1
VESM
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
Unit
V
V
V
mA
mW
°C
°C
2005-03-30