RN2107F Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2107F~RN2109F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1107F~RN1109F
Equivalent Circuit and Bias Resister Values
Type No.
RN2107F
RN2108F
RN2109F
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 2.3 mg
―
―
2-2HA1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN2107F
V_CBO
−50
V
~RN2109F
V_CEO
−50
V
RN2107F
−6
Emitter-base voltage
RN2108F
V_EBO
−7
V
RN2109F
−15
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I_C
−100
mA
RN2107F
P_C
~RN2109F
T_j
100
mW
150
°C
T_stg
−55~150
°C
000707EAA1
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2001-02-08 1/5