RN2107CT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107CT ~ RN2109CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107CT,RN2108CT,RN2109CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1107CT to RN1109CT
Equivalent Circuit and Bias Resistor Values
Top View
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN2107CT
RN2108CT
RN2109CT
R1 (kΩ)
10
22
47
Absolute Maximum Ratings (Ta = 25°C)
R2 (kΩ)
47
47
22
CST3
1.BASE
2.EMITTER
3.COLLECOTR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN2107CT
to
RN2109CT
RN2107CT
Emitter-base voltage
RN2108CT
RN2109CT
Collector current
Collector power dissipation ^RN2107CT
to
Junction temperature
RN2109CT
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
−20
V
−20
V
−6
−7
V
−15
−50
mA
50
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-08-20