RN2107ACT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2107ACT~RN2109ACT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107ACT,RN2108ACT,RN2109ACT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Extra small package (CST3) is applicable for extra high density
fabrication.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1107ACT to RN1109ACT
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2107ACT
RN2108ACT
RN2109ACT
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Absolute Maximum Ratings (Ta = 25°C)
Top View
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
CST3
1.BASE
2.EMITTER
3.COLLECOTR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
RN2107ACT to RN2109ACT
Collector-emitter voltage
V_CEO
−50
V
RN2107ACT
−6
Emitter-base voltage
RN2108ACT
V_EBO
−7
V
RN2109ACT
−15
Collector current
I_C
−80
mA
Collector power dissipation
P_C
RN2107ACT to RN2109ACT
Junction temperature
T_j
100*
mW
150
°C
Storage temperature range
T_stg
−55 to 150
°C
* : Mounted on FR4 board (10 mm × 10 mm × 1 mm)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-04-06