RN2101 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101~RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101~2106
RN2101~2104
RN2105, 2106
RN2101~2106
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2-2H1A
1
2001-06-07