RN2007 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2007~RN2009
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2007,RN2008,RN2009
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1007~RN1009
Equivalent Circuit and Bias Resister Values
Type No.
RN2007
RN2008
RN2009
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2007
RN2008
RN2009
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
TO-92
SC-43
2-5F1B
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
−50
V
−50
V
−6
−7
V
−15
−100
mA
400
mW
150
°C
−55~150
°C
1
2001-06-07