RN2001 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2001~RN2006
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2001,RN2002,RN2003
RN2004,RN2005,RN2006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1001~RN1006
Equivalent Circuit and Bias Resister Values
Type No.
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2001~2006
RN2001~2004
RN2005, 2006
RN2001~2006
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−10
−5
−100
400
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
Unit
V
V
V
mA
mW
°C
°C
TO-92
SC-43
2-5F1B
1
2001-06-07