RN1973 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1973
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1973
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
• Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Diverse resistance values are available suited to a range of different circuit
designs.
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
R1: 47 kΩ (Q1, Q2 common)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
Rating
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
100
mA
P_C (Note)
200
mW
T_j
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 0.0068 g (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
1
2004-05-20