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RN1972CT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972CT,RN1973CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1972CT,RN1973CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2972CT, RN2973CT
1.0±0.05
0.15±0.03
Unit: mm
6
5
4
1
2
3
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
Equivalent Circuit
C
R1
B
E
CST6
1.EMITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
JEDEC
―
JEITA
―
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Equivalent Circuit
(top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
20
V
VEBO
5
V
IC
50
mA
PC(Note 1)
140
mW
Tj
150
°C
Tstg
−55 to 150
°C
65 4
Q1
Q2
123
Note 1: Total rating
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-05-11