RN1970HFE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1970,RN1971
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1970,RN1971
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
z Including two devices in US6 (ultra super mini type 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2970~RN2971
Equivalent Circuit
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
100
mA
200
mW
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 6.8mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit (Top View)
1
2007-11-01