RN1970CT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1970CT, RN1971CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1970CT,RN1971CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2970CT, RN2971CT
Equivalent Circuit
C
R1
B
E
Unit: mm
1.0±0.05
0.15±0.03
６
５
４
１
２
３
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
CST6
1.EMITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
JEDEC
―
JEITA
―
TOSHIBA
2-1K1A
Weight:1.0mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note1: Total rating
Symbol
Rating
Unit
V_CBO
20
V
V_CEO
20
V
V_EBO
5
V
I_C
50
mA
P_C(Note1)
140
mW
T_j
150
°C
T_stg
−55 to 150
°C
Equivalent Circuit
(top view)
65 4
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions
(i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-06-15