RN1970 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1970,RN1971
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1970,RN1971
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
Including two devices in US6 (ultra super mini type 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2970~RN2971
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
100
mA
200
mW
150
°C
−55~150
°C
Equivalent Circuit (Top View)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 6.8mg(typ.)
1
2005-02-22