RN1967 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1967~RN1969
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1967,RN1968,RN1969
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit:mm
l Including two devices in US6 (ultra super mini type 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2967~RN2969
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1967
10
RN1968
22
RN1969
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1967~1969
RN1967~1969
RN1967
RN1968
RN1969
RN1967~1969
RN1967~1969
RN1967~1969
RN1967~1969
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
6
7
V
15
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07