RN1964 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1961~RN1966
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961,RN1962,RN1963
RN1964,RN1965,RN1966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
· Complementary to RN2961~RN2966
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1961
4.7
RN1962
10
RN1963
22
RN1964
47
RN1965
2.2
RN1966
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1961~1966
RN1961~1964
RN1965, 1966
RN1961~1966
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
10
V
5
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07