RN1962FE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FE~RN1966FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FE,RN1962FE,RN1963FE
RN1964FE,RN1965FE,RN1966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
· Complementary to RN2961FE~RN2966FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
R1 (kW)
4.7
10
22
47
2.2
4.7
R2 (kW)
4.7
10
22
47
47
47
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN1961FE~
1966FE
Emitter-base voltage
RN1961FE~
1964FE
RN1965FE,
1966FE
Collector current
Collector power dissipation _RN1961FE~
Junction temperature
RN1966FE
Storage temperature range
V_CBO
50
V
V_CEO
50
V
10
V_EBO
V
5
I_C
100
mA
P_C (Note) 100
mW
T_j
150
°C
T_stg
-55~150
°C
Note: Total rating
Equivalent Circuit
(top view)
654
Q1
Q2
123
1
2002-01-29