RN1912FS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

RN1912FS,RN1913FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1912FS,RN1913FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2912FS, RN2913FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
1234_{1234........EEBCBECEMMAOAMMOSLSII}IILTT_ITELELTTT_T2EE1TEE_ECCERRR_TRT2O12O_1RR22
(E^(E1¹) ⁾
(E^(B2¹) ⁾
(B^(C2²) ⁾
(C^(E2²) ⁾
fS6 ^5656....BCBC_OA^{AOSLSLELEE1E2E}_CC_TT_OO_RR₁1^{((BC((CB2121)) ))}
JEDEC
⎯
Absolute Maximum Ratings (Ta = 25°C)
(Q1,Q2 common)
JEITA
⎯
TOSHIBA
⎯
Characteristics
Symbol
Rating
Unit
Weight:0.001g (typ.)
Collector-base voltage
V_CBO
20
V
Collector-emitter voltage
V_CEO
20
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
50
mA
Collector power dissipation
P_C(Note 1)
50
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
Equivalent Circuit
(Top View)
654
Q1
Q2
123
1
2007-11-01