RN1910FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1910FS,RN1911FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1910FS,RN1911FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN2910FS, RN2911FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
12_{12....EEBEMMAMSII}IT_ITETT_T1TE_EERR_R21₁
(E^(E1¹) ⁾
(E^(B2¹) ⁾
fS6
3456_{3456........CBCBBCCEOAOAAMOOSSLLSILLTEELLELET21EE}E2EE_CCCCR_TTTT_OO2OORRRR₁₂21_((((BCBC((((CCEB_{22212221)))) ))))}
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
JEDEC
―
JEITA
―
Characteristics
Collector-base voltage
Collector-emitter voltage
Symbol
V_CBO
V_CEO
Rating
20
20
Unit
TOSHIBA
2-1F1D
V
V
Weight: 0.001g (typ.)
Emitter-base voltage
V_EBO
5
V
Collector current
Collector power dissipation
I_C
50
P_C(Note 1)
50
mA _{Equivalent Circuit}
mW
(top view)
Junction temperature
T_j
150
°C
654
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
Q1
Q2
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
123
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910FS
RN1911FS
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
R1
Test Condition
V_CB = 20 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 1 mA
I_C = 5 mA, I_B = 0.25 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
⎯
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
300 ⎯
⎯
⎯
⎯
0.15
V
⎯
1.2
⎯
pF
3.76
4.7
5.64
kΩ
8
10
12
1
2007-11-01