RN1910AFS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1910AFS, RN1911AFS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1910AFS, RN1911AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
• Complementary to the RN2910AFS/RN2911AFS
Equivalent Circuit and Bias Resistor Values
C
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
R1
E
1. EMITTER1 ^(E1)
2. BASE1
(B1)
3. COLLECTOR2 ^(C2)
4. EMITTER2 ^(E2)
5. BASE2
(B2)
fS6 ^{6. COLLECTOR1 (C1)}
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
JEDEC
―
JEITA
―
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
TOSHIBA
2-1F1D
Collector-emitter voltage
V_CEO
50
V
Weight: 0.001 g (typ.)
Emitter-base voltage
Collector current
V_EBO
I_C
5
V
80
mA
Equivalent Circuit
(top view)
Collector power dissipation
P_C (Note 1)
50
mW
654
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
Q1
Q2
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
123
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910AFS
RN1911AFS
Symbol
Test Condition
Min Typ. Max Unit
I_CBO
I_EBO
h_FE
V_{CE (sat)}
V_CB = 50 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 1 mA
I_C = 5 mA, I_B = 0.25 mA
⎯
⎯
100
nA
⎯
⎯
100
nA
120
⎯
700
⎯
⎯ 0.15
V
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz ⎯
0.7
⎯
pF
R1
⎯
3.76
4.7
5.64
kΩ
8
10
12
1
2007-11-01