RN1907FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1907FE~RN1909FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1907FE, RN1908FE, RN1909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN2907FE~RN2909FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1907FE
RN1908FE
RN1909FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 0.003 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristics
Symbol
Rating
Unit
654
Collector-base voltage
RN1907FE~
V_CBO
50
V
Collector-emitter voltage
RN1909FE
V_CEO
50
V
RN1907FE
6
Emitter-base voltage
RN1908FE
V_EBO
7
V
RN1909FE
15
Collector current
I_C
100
mA
Collector power dissipation _RN1907FE~ P_C (Note 1) 100
mW
Junction temperature
RN1909FE
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01