RN1907 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1907~RN1909
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1907
10
RN1908
22
RN1909
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1907~1909
RN1907
RN1908
RN1909
RN1907~1909
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
6
7
V
15
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07