RN1902 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1901~RN1906
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1901,RN1902,RN1903
RN1904,RN1905,RN1906
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2901~RN2906
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1901
4.7
RN1902
10
RN1903
22
RN1904
47
RN1905
2.2
RN1906
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1901~1906
RN1901~1904
RN1905, 1906
RN1901~1906
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
50
V
50
V
10
V
5
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07