RN1901FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1901FE~RN1906FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1901FE, RN1902FE, RN1903FE
RN1904FE, RN1905FE, RN1906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Complementary to RN2901FE to RN2906FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1901FE
RN1902FE
RN1903FE
RN1904FE
RN1905FE
RN1906FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 3 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
RN1901FE to ^VCBO
50
V
Collector-emitter voltage
RN1906FE
V_CEO
50
V
RN1901FE to
RN1904FE
10
Emitter-base voltage
V_EBO
V
RN1905FE,
RN1906FE
5
Collector current
I_C
100
mA
Collector power dissipation _{RN1901FE to}
P_C (Note
1)
100
mW
RN1906FE
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Equivalent Circuit
(top view)
654
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-14