RN1901AFS Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1901AFS~RN1906AFS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1901AFS, RN1902AFS, RN1903AFS
RN1904AFS, RN1905AFS, RN1906AFS
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
• Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs.
• Complementary to the RN2901AFS~RN2906AFS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1901AFS
RN1902AFS
RN1903AFS
RN1904AFS
RN1905AFS
RN1906AFS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1. EMITTER1 ^(E1)
2. BASE1
(B1)
3. COLLECTOR2 ^(C2)
4. EMITTER2 ^(E2)
5. BASE2
(B2)
fS6 ^{6. COLLECTOR1 (C1)}
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
RN1901AFS~1906AFS
Collector-emitter voltage
V_CEO
50
V
RN1901AFS~1904AFS
10
Emitter-base voltage
V_EBO
V
RN1905AFS, 1906AFS
5
Collector current
I_C
80
mA
Collector power dissipation
P_C (Note 1)
50
mW
RN1901AFS~1906AFS
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
654
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01