RN1710JE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1710JE,RN1711JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1710JE,RN1711JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Wide range of resistor values are available to use in various circuit
designs.
• Complementary to RN2710JE~RN2711JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
1.BASE1
(B1)
2.EMITTER (E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.003 g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
Rating
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
100
mA
P_C (Note)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
1
2004-03-01