RN1707JE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

RN1707JE~RN1709JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1707JE,RN1708JE,RN1709JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
· Wide range of resistor values are available to use in various circuit
designs.
· Complementary to RN2707JE~2709JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1707JE
RN1708JE
RN1709JE
R1 (kW)
10
22
47
R2 (kW)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN1707JE~
1709JE
RN1707JE
Emitter-base voltage
RN1708JE
RN1709JE
Collector current
Collector power dissipation _RN1707JE~
Junction temperature
1709JE
Storage temperature range
V_CBO
50
V
V_CEO
50
V
6
V_EBO
7
V
15
I_C
100
mA
P_C (Note) 100
mW
T_j
150
°C
T_stg
-55~150
°C
Note: Total rating
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
1
2002-01-29