RN1701 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1701~RN1706
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1701,RN1702,RN1703
RN1704,RN1705,RN1706
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in USV (ultra super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2701~RN2706
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1701
4.7
RN1702
10
RN1703
22
RN1704
47
RN1705
2.2
RN1706
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
―
―
2-2L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1701~1706
RN1701~1704
RN1705, 1706
RN1701~1706
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c*
T_j
T_stg
Rating
Unit
50
V
50
V
10
V
5
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07