RN1673 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1673
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1673
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into a Super-Mini (6 pin) package
• Incorporating a bias resistor into a transistor reduces parts count. Reducing
the parts count enable the manufacture of ever more compact equipment
and save assembly cost.
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
R1: 47 kΩ (Q1, Q2 common)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 15 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Equivalent Circuit
(top view)
Collector-base voltage
V_CBO
50
V
654
Collector-emitter voltage
Emitter-base voltage
V_CEO
50
V
V_EBO
5
V
Q1
Q2
Collector current
I_C
100
mA
Collector power dissipation
Junction temperature
P_C (Note*)
300
mW
T_j
150
°C
123
Storage temperature range
T_stg
−55 to 150
°C
Note*:
Note:
Total rating
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-05-12