RN1544 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1544
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1544
For use in Muting and Switching Applications.
· Emitter-base voltage is high: VEBO = 25 V (max)
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Unit: mm
Equivalent Circuit
C
h_FE
classification
A
B
R1
B
Marking
44A
44B
E
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note1: Total rating
Symbol
Rating
Unit
V_CBO
50
V
V_CEO
20
V
V_EBO
25
V
I_C
300
mA
P_C (Note1)
300
mW
T_j
150
°C
T_stg
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: g (typ.)
5
4
Q1
Q2
123
Equivalent Circuit
(top view)
1
2002-01-29