RN1544-A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – For use in Muting and Switching Applications

RN1544
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1544
For use in Muting and Switching Applications
• Emitter-base voltage is high: V_EBO = 25 V (max)
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit
Unit: mm
C
h_FE
classification
A
B
R1
B
Marking
44A
44B
E
Absolute Maximum Ratings (Ta = 25°C)
SMV
(Q1, Q2 common)
JEDEC
―
Characteristics
Symbol
Rating
Unit
JEITA
―
Collector-base voltage
V_CBO
50
V
TOSHIBA
2-3L1A
Collector-emitter voltage
V_CEO
20
V
Weight: 0.014g (typ.)
Emitter-base voltage
V_EBO
25
V
Collector current
I_C
300
mA
Collector power dissipation
Junction temperature
Storage temperature range
P_C (Note1)
300
mW
T_j
150
°C
T_stg
−55~150
°C
Equivalent Circuit
(top view)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5
4
Q1
Q2
123
Note1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 25 V, I_C = 0
h_FE (Note2) V_CE = 2 V, I_C = 4 mA
V_{CE (sat)} I_C = 10 mA, I_B = 1 mA
f_T
V_CE = 6 V, I_C = 4 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
R1
⎯
Note2: hFE classification A: 200~700, B: 350~1200
Min Typ. Max Unit
⎯
⎯ 100 nA
⎯
⎯ 100 nA
200
⎯ 1200
⎯
⎯
0.1
V
⎯
30
⎯ MHz
⎯
⎯
7
pF
1.54 2.2 2.86 kΩ
1
2007-11-21