RN1510 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1510,RN1511
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1510,RN1511
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SMV
l (super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2510~RN2511
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
V_CBO
50
V
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
Collector power dissipation
Junction temperature
I_C
100
mA
P_C *
300
mW
T_j
150
°C
Storage temperature range
*:
Total rating
T_stg
−55~150
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Equivalent Circuit
(Top View)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1510
RN1511
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1MHz
―
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120
―
700
―
0.1
0.3
V
―
250
― MHz
―
3
6
pF
3.29 4.7 6.11
kW
7
10
13
1
2001-06-13