RN1507 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1507~RN1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1507,RN1508,RN1509
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SMV
(super mini type with 5 leads)With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2507~RN2509
Equivalent Circuit and Bias Resister Values
Type No.
RN1907
RN1908
RN1909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN1507~1509
RN1507
RN1508
RN1509
RN1507~1509
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
T_stg
Rating
Unit
50
V
50
V
6
7
V
15
100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-07