RN1501 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1501~RN1506
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1501,RN1502,RN1503
RN1504,RN1505,RN1506
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SMV
(super mini type with 5 leads)With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2501~RN2506
Equivalent Circuit and Bias Resister Values
Type No.
RN1501
RN1502
RN1503
RN1504
RN1505
RN1506
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-3L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN1501~1506
RN1501~1504
RN1505, 1506
RN1501~1506
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
T_stg
Rating
Unit
50
V
50
V
10
V
5
100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-07