RN1441_07 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

RN1441∼RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
z High emitter-base voltage: V_EBO = 25V (min)
z High reverse h_FE: reverse h_FE = 150 (typ.) (V_CE = −2V, I_C = −4mA)
z Low on resistance: R_ON = 1Ω (typ.) (I_B = 5mA)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Unit in mm
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Absolute Maximum Ratings (Ta = 25°C)
Marking
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
Unit
50
V
20
V
25
V
300
mA
200
mW
150
°C
−55~150
°C
Type No.
RN1441
RN1442
RN1443
RN1444
H_FE classification
A
B
KA
KB
LA
LB
NA
NB
CA
CB
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01